Atomic force microscopy; Gallium arsenide; Phonons; Raman spectroscopy; Semiconducting gallium; X ray diffraction; X ray diffraction analysis; Beam equivalent pressure; Crystalline quality; High resolution X ray diffraction; Intensity ratio; Longitudinal optical phonons; Structural characterization; Surface corrugations; Transverse optical phonons; Aluminum gallium arsenide
Structural characterization of AlGaAs:Si/GaAs (631) heterostructures as a function of As pressure
AlGaAs:Si/GaAs heterostructures were grown on (631) and (100) GaAs substrates and studied as a function of the As cell beam equivalent pressure. High-resolution x-ray diffraction patterns showed that the highest quality AlGaAs epitaxial layers were grown at PAs = 1.9 × 10-5 for (100)- A nd PAs = 4 × 10-5 mbar for (631)-oriented substrates. Raman spectroscopy revealed higher crystalline quality for films grown on (631) oriented substrates. The GaAs- A nd AlAs-like modes of the AlGaAs(631) films exhibited increased intensity ratios between the transverse optical phonons and longitudinal optical phonons with increasing PAs, whereas the ratios were decreased for the (100) plane. This is in agreement with the selection rules for (631) and high-resolution x-ray diffraction observations. Anisotropy and surface corrugation of the AlGaAs(631) films also were characterized using atomic force microscopy and Raman spectroscopy. © 2016 American Vacuum Society.
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Generically Dependent Continuant
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Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
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