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RDF description of WSe2 Light-Emitting Tunneling Transistors with Enhanced Brightness at Room Temperature - http://orbis.uaslp.mx/vivo/individual/scopus4251
rights: termsOfUse
date: 2026-08-27T18:17:32
publisher: vivo
type: Document

Article
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Document
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Nano Letters
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type: Periodical
type: Journal
type: Document
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publication venue for: WSe2 Light-Emitting Tunneling Transistors with Enhanced Brightness at Room Temperature
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Continuant
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WSe2 Light-Emitting Tunneling Transistors with Enhanced Brightness at Room Temperature
related by: authorship_24966
related by: authorship_24978
page end: 8228
related by: authorship_24971
abstract: Monolayers of molybdenum and tungsten dichalcogenides are direct bandgap semiconductors, which makes them promising for optoelectronic applications. In particular, van der Waals heterostructures consisting of monolayers of MoS2 sandwiched between atomically thin hexagonal boron nitride (hBN) and graphene electrodes allows one to obtain light emitting quantum wells (LEQWs) with low-temperature external quantum efficiency (EQE) of 1%25. However, the EQE of MoS2- and MoSe2-based LEQWs shows behavior common for many other materials: it decreases fast from cryogenic conditions to room temperature, undermining their practical applications. Here we compare MoSe2 and WSe2 LEQWs. We show that the EQE of WSe2 devices grows with temperature, with room temperature EQE reaching 5%25, which is 250× more than the previous best performance of MoS2 and MoSe2 quantum wells in ambient conditions. We attribute such different temperature dependences to the inverted sign of spin-orbit splitting of conduction band states in tungsten and molybdenum dichalcogenides, which makes the lowest-energy exciton in WSe2 dark. © 2015 American Chemical Society.
type: Document
related by: authorship_24965
type: Continuant
type: Thing
related by: authorship_24975
related by: authorship_24967
type: Information Content Entity
page start: 8223
estado: published
doi: 10.1021/acs.nanolett.5b03740
related by: authorship_24973
has funding vehicle: Engineering and Physical Sciences Research Council, EPSRC: EP/K005014/1
related by: authorship_24970
crisid: 4252
type: Generically Dependent Continuant
related by: authorship_24964
has publication venue: Nano Letters
e iscopus: 2-s2.0-84949642283
related by: authorship_24977
related by: authorship_24969
volume: 15
related by: authorship_24974
most specific type: Document
related by: authorship_24979
related by: authorship_24980
related by: authorship_24972
issue: 12
freetext keyword: Electroluminescence; graphene; hexagonal boron nitride; photoluminescence; transition metal dichalcogenides; tungsten diselenide; van der Waals heterostructure Boron nitride; Electroluminescence; Graphene; Graphite electrodes; Heterojunctions; Light; Molybdenum compounds; Monolayers; Nitrides; Photoluminescence; Selenium compounds; Semiconductor quantum wells; Temperature; Temperature distribution; Transition metals; Tungsten; Van der Waals forces; Band-gap semiconductors; External quantum efficiency; Hexagonal boron nitride; Hexagonal boron nitride (h-BN); Optoelectronic applications; Transition metal dichalcogenides; Tungsten diselenide; Van der waals; Light emission
date time value: article date 4252
origen: scopus
accesstype: All Open Access, Green
type: Entity
type: Article
related by: authorship_24976
related by: authorship_24968
most specific type: Article
related by: authorship_24981

Engineering and Physical Sciences Research Council, EPSRC: EP/K005014/1
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type: BFO_0000020
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type: Thing
type: Grant
type: Continuant
funding vehicle for: WSe2 Light-Emitting Tunneling Transistors with Enhanced Brightness at Room Temperature

Information Content Entity
type: Class