Document
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Raman scattering from Ge1-xSnx (x ≤ 0:14) alloys
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type: Generically Dependent Continuant
freetext keyword: Raman; Space correlation model
page end: 443
e iscopus: 2-s2.0-84944737686
abstract: Ge1-xSnx alloys with x concentration up to 0.14 were grown on Ge(001) and GaAs(001) substrates in a conventional R. F. Magnetron Sputtering system at low substrate temperatures. The structural characteristics of these alloys were studied for different Sn concentrations between 1 to 14 %25 by high resolution X ray diffraction, and Raman spectroscopy. Contrasting characteristics of the grown layers are observed if the Sn concentration is larger or smaller than 6 %25 as revealed by X-ray diffraction and Raman spectroscopy.
origen: scopus
issue: 6
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most specific type: Article
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crisid: 4198
related by: authorship_24642
date time value: article date 4198
page start: 437
type: Continuant
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has publication venue: Revista Mexicana de Fisica
related by: authorship_24640
estado: published
volume: 61
related by: authorship_24641

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Revista Mexicana de Fisica
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publication venue for: Raman scattering from Ge1-xSnx (x ≤ 0:14) alloys
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Generically Dependent Continuant
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RDF description of Raman scattering from Ge1-xSnx (x ≤ 0:14) alloys - http://orbis.uaslp.mx/vivo/individual/scopus4197
rights: termsOfUse
date: 2026-08-24T03:51:31
publisher: vivo
type: Document

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