Temperature-dependent optical band gap of the metastable zinc-blende structure -GaN
related by: authorship 1714
type: Article
most specific type: Article
page end: 8438
related by: authorship 1716
date time value: article date 405
estado: published
related by: authorship 1713
abstract: The temperature-dependent (10300 K) optical band gap E0(T) of the epitaxial metastable zinc-blende-structure -GaN(001)4×1 has been determined by modulated photoreflectance and used to interpret low-temperature photoluminescence spectra. E0 in -GaN was found to vary from 3.3020.004 eV at 10 K to 3.2310.008 eV at 300 K with a temperature dependence given by E0(T) =3.3026.697×10-4T2/(T%2b600) eV. The spin-orbit splitting 0 in the valence band was determined to be 171 meV. The oscillations in the photoreflectance spectra were very sharp with a broadening parameter of only 10 meV at 10 K. The dominant transition observed in temperature-dependent photoluminescence was attributed to radiative recombination between a shallow donor, at 11 meV below the conduction-band edge and the valence band. © 1994 The American Physical Society.
issue: 12
related by: authorship 1715
origen: scopus
page start: 8433
most specific type: Document
type: Document
type: Continuant
doi: 10.1103/PhysRevB.50.8433
type: Information Content Entity
crisid: 405
related by: authorship 1717
type: Entity
abstract: The temperature-dependent (10300 K) optical band gap E0(T) of the epitaxial metastable zinc-blende-structure -GaN(001)4×1 has been determined by modulated photoreflectance and used to interpret low-temperature photoluminescence spectra. E0 in -GaN was found to vary from 3.3020.004 eV at 10 K to 3.2310.008 eV at 300 K with a temperature dependence given by E0(T) =3.3026.697×10-4T2/(T 600) eV. The spin-orbit splitting 0 in the valence band was determined to be 171 meV. The oscillations in the photoreflectance spectra were very sharp with a broadening parameter of only 10 meV at 10 K. The dominant transition observed in temperature-dependent photoluminescence was attributed to radiative recombination between a shallow donor, at 11 meV below the conduction-band edge and the valence band. © 1994 The American Physical Society.
type: Generically Dependent Continuant
volume: 50
type: Thing
e iscopus: 2-s2.0-0344837490
has publication venue: Physical Review B

Document
type: Class

Continuant
type: Class

Entity
type: Class

Generically Dependent Continuant
type: Class

RDF description of Temperature-dependent optical band gap of the metastable zinc-blende structure -GaN - http://orbis.uaslp.mx/vivo/individual/scopus404
rights: termsOfUse
date: 2026-08-25T06:59:43
publisher: vivo
type: Document

Physical Review B
type: Entity
type: Journal
publication venue for: Temperature-dependent optical band gap of the metastable zinc-blende structure -GaN
type: Collection
type: Periodical
type: Document
type: Continuant
type: Information Content Entity
type: Thing
type: Generically Dependent Continuant

Article
type: Class

Information Content Entity
type: Class