Document
type: Class

Continuant
type: Class

Entity
type: Class

Applied Physics A Solids and Surfaces
type: Document
type: Thing
type: Continuant
type: Entity
type: Collection
type: Journal
publication venue for: Photoconductivity of erbium-doped germanium
type: Generically Dependent Continuant
type: Information Content Entity
type: Periodical

Generically Dependent Continuant
type: Class

RDF description of Photoconductivity of erbium-doped germanium - http://orbis.uaslp.mx/vivo/individual/scopus396
rights: termsOfUse
date: 2026-08-25T07:00:22
publisher: vivo
type: Document

Photoconductivity of erbium-doped germanium
volume: 59
freetext keyword: 07.62.+s; 72.40.+w; 78.50.Ge Electron energy levels; Erbium; Film growth; Infrared detectors; Ionization; Molecular beam epitaxy; Photoconductivity; Semiconducting films; Semiconductor doping; Semiconductor growth; Spectroscopy; Substrates; Erbium doped germanium; Photothermal ionization spectroscopy (PTIS); semiconducting germanium
most specific type: Article
date time value: article date 397
type: Generically Dependent Continuant
type: Entity
type: Document
type: Thing
origen: scopus
page end: 379
most specific type: Document
page start: 373
doi: 10.1007/BF00331714
related by: authorship 1688
freetext keyword: 07.62. s; 72.40. w; 78.50.Ge Electron energy levels; Erbium; Film growth; Infrared detectors; Ionization; Molecular beam epitaxy; Photoconductivity; Semiconducting films; Semiconductor doping; Semiconductor growth; Spectroscopy; Substrates; Erbium doped germanium; Photothermal ionization spectroscopy (PTIS); semiconducting germanium
related by: authorship 1689
e iscopus: 2-s2.0-0028529589
crisid: 397
type: Article
issue: 4
related by: authorship 1690
abstract: We have applied the technique of Photo Thermal Ionization Spectroscopy (PTIS) to the study of an erbium-doped p-Ge epitaxial layer, grown by MBE on an undoped n-type germanium substrate. The Er-doped Ge layer shows continuum photoconductivity response in the far-infrared region extending from 70 cm-1 to 900 cm-1. This type of epitaxial Er-doped Ge layers is a potentially attractive system for photoconductivity detectors of far-infrared radiation. Below 900 cm-1 three acceptor-like charged states can be distinguished with ionization energies of 9, 26.6 and ≥50 meV. Additionally, a study of the photoconductive response of the same sample for radiation from 1000 cm-1 to 10000 cm-1, i.e., for radiation energies well inside the forbidden gap to energies above it, shows a wealth of levels, some of which have previously been associated with erbium. © 1994 Springer-Verlag.
estado: published
related by: authorship 1691
type: Information Content Entity
type: Continuant
has publication venue: Applied Physics A Solids and Surfaces

Article
type: Class

Information Content Entity
type: Class