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Generically Dependent Continuant
RDF description of Photoconductivity of erbium-doped germanium - http://orbis.uaslp.mx/vivo/individual/scopus396
07.62.+s; 72.40.+w; 78.50.Ge Electron energy levels; Erbium; Film growth; Infrared detectors; Ionization; Molecular beam epitaxy; Photoconductivity; Semiconducting films; Semiconductor doping; Semiconductor growth; Spectroscopy; Substrates; Erbium doped germanium; Photothermal ionization spectroscopy (PTIS); semiconducting germanium
07.62. s; 72.40. w; 78.50.Ge Electron energy levels; Erbium; Film growth; Infrared detectors; Ionization; Molecular beam epitaxy; Photoconductivity; Semiconducting films; Semiconductor doping; Semiconductor growth; Spectroscopy; Substrates; Erbium doped germanium; Photothermal ionization spectroscopy (PTIS); semiconducting germanium
Photoconductivity of erbium-doped germanium
We have applied the technique of Photo Thermal Ionization Spectroscopy (PTIS) to the study of an erbium-doped p-Ge epitaxial layer, grown by MBE on an undoped n-type germanium substrate. The Er-doped Ge layer shows continuum photoconductivity response in the far-infrared region extending from 70 cm-1 to 900 cm-1. This type of epitaxial Er-doped Ge layers is a potentially attractive system for photoconductivity detectors of far-infrared radiation. Below 900 cm-1 three acceptor-like charged states can be distinguished with ionization energies of 9, 26.6 and ≥50 meV. Additionally, a study of the photoconductive response of the same sample for radiation from 1000 cm-1 to 10000 cm-1, i.e., for radiation energies well inside the forbidden gap to energies above it, shows a wealth of levels, some of which have previously been associated with erbium. © 1994 Springer-Verlag.
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