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Generically Dependent Continuant
RDF description of Highly ordered self-assembled nanoscale periodic faceting in GaAs(631) homoepitaxial growth - http://orbis.uaslp.mx/vivo/individual/scopus3132
Article
Consejo Nacional de Ciencia y Tecnología, CONACYT
We report on the self-assembly of large-order-correlated nanoscale faceting on GaAs(631)A substrates grown by molecular beam epitaxy. The surface morphology of the grown samples as a function of the growth temperature and the As-beam equivalent pressure was studied using atomic force microscopy. A two-dimensional autocorrelation function analysis was performed in order to quantitatively determine the uniformity of the surface corrugation. By optimizing the growth conditions, correlated faceted areas as large as 1.7 × 1.7 μm 2 are obtained. The highly ordered surface corrugation discussed here provides useful insights to prepare highly ordered facet planes for the self organized growth of quantum wires. © 2012 American Institute of Physics.
Highly ordered self-assembled nanoscale periodic faceting in GaAs(631) homoepitaxial growth
Autocorrelation function analysis; Equivalent pressure; GaAs; Growth conditions; Homoepitaxial growth; Nano scale; Nanoscale faceting; Self organized growth; Self-assembled; Surface corrugations; Atomic force microscopy; Epitaxial growth; Molecular beam epitaxy; Nanotechnology; Regression analysis; Semiconducting gallium; Two dimensional; Gallium arsenide
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