Document
type: Class

Applied Physics Letters
type: Collection
type: Generically Dependent Continuant
type: Thing
type: Document
type: Entity
type: Continuant
type: Periodical
type: Information Content Entity
publication venue for: Highly ordered self-assembled nanoscale periodic faceting in GaAs(631) homoepitaxial growth
type: Journal

Continuant
type: Class

Entity
type: Class

Generically Dependent Continuant
type: Class

RDF description of Highly ordered self-assembled nanoscale periodic faceting in GaAs(631) homoepitaxial growth - http://orbis.uaslp.mx/vivo/individual/scopus3132
rights: termsOfUse
date: 2026-08-25T07:34:56
publisher: vivo
type: Document

Article
type: Class

Consejo Nacional de Ciencia y Tecnología, CONACYT
type: Relationship
type: BFO_0000020
type: Entity
type: Thing
type: Grant
type: Continuant
funding vehicle for: Highly ordered self-assembled nanoscale periodic faceting in GaAs(631) homoepitaxial growth

Highly ordered self-assembled nanoscale periodic faceting in GaAs(631) homoepitaxial growth
type: Document
has publication venue: Applied Physics Letters
artnum: 73112
abstract: We report on the self-assembly of large-order-correlated nanoscale faceting on GaAs(631)A substrates grown by molecular beam epitaxy. The surface morphology of the grown samples as a function of the growth temperature and the As-beam equivalent pressure was studied using atomic force microscopy. A two-dimensional autocorrelation function analysis was performed in order to quantitatively determine the uniformity of the surface corrugation. By optimizing the growth conditions, correlated faceted areas as large as 1.7 × 1.7 μm 2 are obtained. The highly ordered surface corrugation discussed here provides useful insights to prepare highly ordered facet planes for the self organized growth of quantum wires. © 2012 American Institute of Physics.
type: Continuant
type: Information Content Entity
related by: authorship_18238
type: Entity
volume: 101
type: Generically Dependent Continuant
has funding vehicle: Consejo Nacional de Ciencia y Tecnología, CONACYT
freetext keyword: Autocorrelation function analysis; Equivalent pressure; GaAs; Growth conditions; Homoepitaxial growth; Nano scale; Nanoscale faceting; Self organized growth; Self-assembled; Surface corrugations; Atomic force microscopy; Epitaxial growth; Molecular beam epitaxy; Nanotechnology; Regression analysis; Semiconducting gallium; Two dimensional; Gallium arsenide
most specific type: Document
related by: authorship_18236
type: Article
origen: scopus
estado: published
issue: 7
most specific type: Article
crisid: 3133
e iscopus: 2-s2.0-84865426304
related by: authorship_18237
doi: 10.1063/1.4746423
date time value: article date 3133
type: Thing

Information Content Entity
type: Class