Consejo Nacional de Ciencia y Tecnología, CONACYT: S-3148
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funding vehicle for: Nonvolatile write-once-read-many-times memory device with functionalized-nanoshells/PEDOT:PSS nanocomposites

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103.5/07/2574
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funding vehicle for: Nonvolatile write-once-read-many-times memory device with functionalized-nanoshells/PEDOT:PSS nanocomposites

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RDF description of Nonvolatile write-once-read-many-times memory device with functionalized-nanoshells/PEDOT:PSS nanocomposites - http://orbis.uaslp.mx/vivo/individual/scopus2758
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date: 2026-08-23T22:43:03
publisher: vivo
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Article
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Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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publication venue for: Nonvolatile write-once-read-many-times memory device with functionalized-nanoshells/PEDOT:PSS nanocomposites
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Universidad Autónoma de San Luis Potosí, UASLP
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funding vehicle for: Nonvolatile write-once-read-many-times memory device with functionalized-nanoshells/PEDOT:PSS nanocomposites

Nonvolatile write-once-read-many-times memory device with functionalized-nanoshells/PEDOT:PSS nanocomposites
crisid: 2759
has publication venue: Materials Science and Engineering B: Solid-State Materials for Advanced Technology
volume: 176
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estado: published
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issue: 5
related by: authorship_16192
related by: authorship_16193
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has funding vehicle: Consejo Nacional de Ciencia y Tecnología, CONACYT: S-3148
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page start: 462
has funding vehicle: 103.5/07/2574
related by: authorship_16194
origen: scopus
most specific type: Article
abstract: We have investigated the memory effect of the nanocomposites of functionalized carbon nanoshells (f-CNSs) mixed with poly(3,4- ethylenedioxythiophene) doped with polystyrenesulfonate (PEDOT:PSS) polymer. The f-CNSs were synthesized by the spray pyrolysis method and functionalized in situ with functional groups (OH, COOH, C-H, C-OH) with the aim of improving their compatibility in the aqueous dispersion of PEDOT:PSS. The current-voltage (I-V) sweep curves at room temperature for the Al/f-CNSs, for certain concentrations range, embedded in a PEDOT:PSS layer/Al devices showed electrical bistability for write-once-read-many-times (WORM) memory devices. The memory effect observed in the devices can be explained due to the existence of trapped charges in the f-CNSs/PEDOT:PSS layer. The carrier transport mechanisms for the memory devices is studied and discussed. © 2011 Elsevier B.V. All rights reserved.
freetext keyword: Carbon nanostructures; PEDOT:PSS; WORM memoy Aqueous dispersions; Carbon Nanostructures; Current voltage; Electrical Bistability; Ethylenedioxythiophenes; Functionalized; In-situ; Memory device; Memory effects; Nanoshells; Non-volatile; PEDOT:PSS; Polystyrene sulfonate; Room temperature; Spray pyrolysis method; Transport mechanism; Trapped charge; WORM memoy; Write-once-read-many; Functional groups; Functional polymers; Nanocomposites; Nanostructures; Polystyrenes; Spray pyrolysis; Conducting polymers
has funding vehicle: Universidad Autónoma de San Luis Potosí, UASLP
related by: authorship_16196
date time value: article date 2759
page end: 466
related by: authorship_16191
doi: 10.1016/j.mseb.2011.01.006

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