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Journal of Physics D: Applied Physics
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type: Generically Dependent Continuant
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publication venue for: Structural study of ZnSe films grown on substrate with InxGa1-xAs and Al1-xGaxAs buffer layers: Strain, relaxation and lattice parameter
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date: 2026-08-25T06:59:37
publisher: vivo
type: Document
label: RDF description of Structural study of ZnSe films grown on substrate with InxGa1-xAs and Al1-xGaxAs buffer layers: Strain, relaxation and lattice parameter - http://orbis.uaslp.mx/vivo/individual/scopus1114

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Structural study of ZnSe films grown on substrate with InxGa1-xAs and Al1-xGaxAs buffer layers: Strain, relaxation and lattice parameter
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has publication venue: Journal of Physics D: Applied Physics
estado: published
related by: authorship 6580
type: Document
related by: authorship 6579
most specific type: Document
related by: authorship 6578
type: Continuant
related by: authorship 6575
most specific type: Article
crisid: 1115
page end: 1413
origen: scopus
type: Information Content Entity
date time value: article date 1115
related by: authorship 6577
e iscopus: 2-s2.0-0037150894
issue: 12
related by: authorship 6576
abstract: ZnSe layers of various thickness were grown on (001) GaAs substrates, using InxGa1-xAs or Al1-xGaxAs as buffer layers by molecular beam epitaxy and were studied by high-resolution x-ray diffraction. The principal structural characteristics of ZnSe layer and buffer layer were determined using several reflections, such as (004) and two pairs of coupled asymmetric reflections, namely (224), (-2-24) and (115) (-1-15). In order to evaluate their validity, the experimental data obtained from these reflections were handled by means of two known expressions found in the literature. We have found the relaxation process of ZnSe layers is well described by a geometrical model including the thermal strain and small strain due to work hardening. The relaxation process is faster for ZnSe grown on ternary buffer layers despite the fact that, some buffer layers are pseudomorphically grown to the substrate; therefore we conclude that not only the lattice mismatches have effect on the relaxation process but also the surface state of the buffer layer has an influence in this process.
type: Generically Dependent Continuant
page start: 1408
freetext keyword: Film preparation; Lattice constants; Light reflection; Molecular beam epitaxy; Relaxation processes; Semiconducting gallium arsenide; Strain; Strain hardening; Thin films; X ray diffraction analysis; Buffer layers; Coupled asymmetric reflections; Semiconducting zinc compounds
volume: 35
artnum: 318
type: Article
doi: 10.1088/0022-3727/35/12/318