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RDF description of Influence of growth direction on order-disorder transition in (formula presented) alloys - http://orbis.uaslp.mx/vivo/individual/scopus1074
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date: 2026-08-24T03:51:27
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Physical Review B - Condensed Matter and Materials Physics
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publication venue for: Influence of growth direction on order-disorder transition in (formula presented) alloys
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Article
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Influence of growth direction on order-disorder transition in (formula presented) alloys
crisid: 1075
abstract: (formula presented) metastable alloys were epitaxially grown on (001), (111), (110), and (112) GaAs. Single-crystal alloys were obtained for Si concentrations in the range (formula presented) At higher concentrations the Si segregated. The long-range order parameter, for each growth direction studied, was determined as a function of Si concentration by high-resolution x-ray diffraction. The behavior of this parameter with Si concentration is influenced by growth direction. This fact provides direct evidence that the substrate geometry affects the atomic ordering of these alloys. The results obtained from these alloys provide additional support to the validity of the proposal that the growth direction influences the order-disorder transition observed in other alloys of this kind. © 2001 The American Physical Society.
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issue: 3
type: Document
estado: published
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most specific type: Article
e iscopus: 2-s2.0-85038339099
origen: scopus
has publication venue: Physical Review B - Condensed Matter and Materials Physics
related by: authorship 6099
type: Information Content Entity
doi: 10.1103/PhysRevB.65.033308
type: Generically Dependent Continuant
related by: authorship 6100
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type: Thing
page start: 1
type: Article
page end: 4
date time value: article date 1075
related by: authorship 6098
volume: 65