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RDF description of Influence of growth direction on order-disorder transition in (GaAs)1-x(Si2)x alloys - http://orbis.uaslp.mx/vivo/individual/scopus1073
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date: 2026-08-24T03:50:42
publisher: vivo
type: Document

Physical Review B - Condensed Matter and Materials Physics
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type: Information Content Entity
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type: Document
publication venue for: Influence of growth direction on order-disorder transition in (GaAs)1-x(Si2)x alloys
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Article
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Influence of growth direction on order-disorder transition in (GaAs)1-x(Si2)x alloys
type: Document
type: Entity
origen: scopus
page start: 333081
volume: 65
page end: 333084
type: Information Content Entity
freetext keyword: alloy; arsenic derivative; gallium; silicon derivative; article; concentration response; crystal structure; molecular dynamics; validation process; X ray diffraction
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artnum: 33308
most specific type: Document
type: Thing
e iscopus: 2-s2.0-0037080750
type: Article
most specific type: Article
related by: authorship 6097
abstract: (GaAs)1-x(Si2)x metastable alloys were epitaxially grown on (001), (111), (110), and (112) GaAs. Single-crystal alloys were obtained for Si concentrations in the range 0≤x≤0.43. At higher concentrations the Si segregated. The long-range order parameter, for each growth direction studied, was determined as a function of Si concentration by high-resolution x-ray diffraction. The behavior of this parameter with Si concentration is influenced by growth direction. This fact provides direct evidence that the substrate geometry affects the atomic ordering of these alloys. The results obtained from these alloys provide additional support to the validity of the proposal that the growth direction influences the order-disorder transition observed in other alloys of this kind.
related by: authorship 6096
has publication venue: Physical Review B - Condensed Matter and Materials Physics
crisid: 1074
related by: authorship 6095
issue: 3
type: Generically Dependent Continuant
estado: published
date time value: article date 1074