abstract

• The growth and characterization of InxGa1-xAs layers with hyperbolic tangent In concentration profiles is presented. Along the growth the molecular beam fluxes of Ga and In, and the substrate temperature were varied. Since the concentration of In is varied during growth process the strain is expected to increase monotonically, and eventually be relaxed via dislocation formation. Positively, reordering of the ternary alloy and the improvement of its crystal quality were propitiated by annealing the samples. The gradual In concentration propitiated along the thickness of the film conduced to variations of the near-surface band bending. The THz emission from GaAs, InAs, and graded samples was investigated by femtosecond laser pumping excitation. The band-bending from hyperbolic-tan graded composition InxGa1-xAs layers causes depth dependence of effective mass and built-in electric fields modifying accordingly the THz emission. © 2022 Elsevier B.V.

authors

• Alanis J.
• Belio-Manzano A.
• Cortés Mestizo Irving Eduardo
• Espinosa Vega Leticia Ithsmel
• Kudriavtsev Y.
• Mercado-Ornelas C.A.
• Méndez García Víctor Hugo
• Valdez-Pérez D.

publication date

• 2022-01-01

funding provided via

• Universidad Autónoma de San Luis Potosí, FRC-UASLP; COPOCyT Fideicomiso 23871, CONACYT-Mexico, Investigadoras e Investigadores por México, Laboratorio Nacional de análisis físicos, químicos y biológicos UASLP  Grant

published in

• Journal of Crystal Growth  Journal

keywords

• A1. Graded composition; A1. Strain; B1. Gallium compounds; B3. THz emitters Electric fields; Gallium arsenide; Indium arsenide; Laser excitation; Molecular beams; Pumping (laser); Semiconducting gallium; Semiconductor alloys; Terahertz waves; Ternary alloys; A1.; As layers; B1.; B3.; Graded composition; Radiation emitters; THz emitters; THz radiation; THz-emission; III-V semiconductors

Digital Object Identifier (DOI)

• 10.1016/j.jcrysgro.2022.126680

PubMed ID

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end page

volume

• 589

issue