abstract

• The potential of the III-nitride semiconductor materials for modern optoelectronic applications as diodes, transistors, LEDs, and photovoltaics has prompted the mechanical characterization of small volumes as thin films. In this paper, the load-displacement curves of cubic indium nitride (c-InN) obtained during the nanoindentation with a Berkovich indenter were investigated. c-InN was obtained by plasma-assisted molecular beam epitaxy growth on c-GaN/MgO (100). The thickness of the c-GaN buffer layer used in all the films studied was 350 nm to eliminate the substrate's effect on the material studied properties. The c-InN thickness is around 180 nm. The reflection high energy electron diffraction and the X-ray diffraction results show that the c-GaN buffer and c-InN grown layers had a high cubic zincblende phase with more than 97%25. The obtained value of the hardness is 12.5 ± 0.4 GPa, and the value for Young's modulus is 365.6 ± 7 GPa with a Poisson's ratio of 0.3. © 2021

authors

• López Luna Edgar
• Vidal Borbolla Miguel Angel

publication date

• 2021-01-01

published in

• Thin Solid Films  Journal

keywords

• Berkovich nanoindentation; Cubic Indium nitride; Mechanical properties; Plasma-assisted molecular beam epitaxy; Thin films Buffer layers; Elastic moduli; Gallium nitride; III-V semiconductors; Indium compounds; Molecular beam epitaxy; Molecular beams; Nanoindentation; Wide band gap semiconductors; Zinc sulfide; Berkovich nanoindentation; Cubic indium nitride; Epilayers grown; III-nitride semiconductors; Indium nitride; Molecular-beam epitaxy; Nano indentation; Optoelectronic applications; Plasma-assisted molecular beam epitaxy; Thin-films; Thin films

Digital Object Identifier (DOI)

• 10.1016/j.tsf.2021.138910

PubMed ID

start page

end page

volume

• 736

issue