abstract

• A set of 3 heterostructures were formed by 10 periods of InGaAs-GaAs epitaxially grown on GaAs substrate by means of a molecular beam epitaxial system. Scanning electron microscopy (SEM) cross section images at high magnification show that the heterostructures present good periodicity. SEM micrographs of the surface morphology chemically etched show the coalescence effect of In due to an unequal etching rate of In and GaAs. Auger electron spectroscopy (AES) depth profiles show that the first GaAs layers in the 3 samples are off-stoichiometric and that the alloy layers present In square and triangular depth profiles. © Published under licence by IOP Publishing Ltd.

authors

• Gómez-Barojas E.
• Rodríguez-Moreno M.A.
• Santamaría-Juárez G.
• Serrano-Rojas R.M.
• Silva-González R.
• Vidal Borbolla Miguel Angel

publication date

• 2014-01-01

published in

• Journal of Physics: Conference Series  Journal

keywords

• Auger electron spectroscopy; Electron spectroscopy; Indium; Molecular beams; Scanning electron microscopy; Semiconducting gallium; Semiconducting indium; Surface morphology; Auger electron spectroscopy depth profiles; Cross-section images; Effect of In; Epitaxially grown; GaAs substrates; High magnifications; Molecular beam epitaxial; SEM micrographs; Gallium arsenide

Digital Object Identifier (DOI)

• 10.1088/1742-6596/480/1/012038

start page

end page

volume

• 480

issue

• 1