3D ReRAM arrays and crossbars: Fabrication, characterization and applications Conference Paper uri icon


  • As the rapid progress of memristor technology continues, multi-layer stacking of these crossbars is needed in order to maximize the use of vertical space and achieve the required density for high throughput applications. This work summarizes our efforts of designing and building three-dimensional monolithically integrated memristive arrays and crossbars, both standalone and onto CMOS chips. We discuss the fabrication and electrical characterization details of stand-alone and CMOS integrated ReRAM arrays and crossbars together with their use in experimental demonstrations of digital and analog applications such as three-dimensional stateful logic, hardware security primitives and dot-product operations. © 2017 IEEE.

publication date

  • 2017-01-01