Photo- And cathodo- luminescence of hydrogenated silicon rich oxide
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abstract
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Photoluminescence and Cathodoluminescence of hydrogenated Silicon Rich Oxide (SRO:H) films were studied. The samples were prepared by Low Pressure Chemical Vapor Deposition (LPCVD) on Si substrates, some samples were thermally annealed at high temperature and hydrogenation was made by low temperature annealing in forming gas. Strong red PL (Photoluminescence) and CL (Cathodoluminescence) in almost all the visible range were obtained. It was found that it is necessary to apply thermal treatment at high temperatures in order to obtain strong Photo and Cathodo-luminescence. Samples with lower silicon excess show maximum luminescence (CL and PL) while samples with higher silicon excess show poor luminescence. The hydrogen promotes the PL emission, but electron beam irradiation (after CL measurements) quenches the red band observed by PL. The results are analyzed to And the dependency of the PL and CL with respect to hydrogénation, silicon excess and thermal treatment An explanation is presented in order to interpret these experimental results. © 2008 IEEE.
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Cathodoluminescence; Photoluminescence; Silicon rich oxide Automation; Cathodoluminescence; Control; Electrical engineering; Electron beams; Heat treatment; Hydrogen; Hydrogenation; Information theory; Oxide films; Photoluminescence; Process control; Semiconductor quantum dots; Electron beam irradiations; Forming gas; High temperatures; Hydrogenated silicons; Low-pressure chemical-vapor depositions; Low-temperature annealing; Pl emissions; Si substrates; Silicon rich oxide; Thermal treatments; Visible ranges; Light emission
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