Investigation of the structural properties of MBE grown ZnSe/GaAs heterostructures Article uri icon

abstract

  • The results of photoluminescence and Raman spectroscopies, high resolution X-ray diffraction, and Auger electron spectroscopy are analyzed in terms of the structural properties of the ZnSe/GaAs(1 0 0) system as a function of film thickness and substrate temperature. The results of Raman spectroscopy and X-ray diffraction clearly show that the strain in the film is inhomogeneous and depends only on film thickness and not on growth temperature in the 285-325°C range. From these experiments a value of ∼ 0.17 μm is inferred for the critical thickness of ZnSe on GaAs. Photoluminescence experiments sensitive to the ZnSe/GaAs interface reveal the presence of strain in the GaAs substrate. Analysis of the intensities of the LMM Auger transitions of Zn and Se indicate the formation of an interfacial layer with excess of Se, suggesting the formation of a pseudomorphic Ga-Se compound mixed with ZnSe at the interfacial region.

publication date

  • 1997-01-01