Optical electromodulation of surface-intrinsic-doped structures Article

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Overview

abstract

• The modulation of the electric field within the intrinsic layer of surface-intrinsic-doped structures by means of a chopped pump beam and in the presence of a constant probe beam is calculated by considering the modulation of the surface voltage by the photoactivated majority carrier flow. The analysis is focused as to determine the dependency on the probe and pump photocurrents and on the chopping frequency of the observed rise and fall transient time constants of the time resolved photoreflectance signal. The non linear features of the carrier dynamics are worked out in detail. A rescaling of the time constants by the power of the probe beam is predicted. © 1997 American Institute of Physics.

authors

• Balderas Navarro Raúl Eduardo
• Urías Hermosillo Jesús

publication date

• 1997-01-01

published in

• Journal of Applied Physics  Journal

Research

keywords

• Carrier dynamics; Chopping frequency; Doped structures; Electromodulation; Intrinsic layer; Majority carriers; Nonlinear features; Photo-activated; Photoreflectance; Probe beam; Pump beams; Rescaling; Surface voltages; Time constants; Time-resolved; Transient time; Electric fields; Semiconductor quantum wells; Probes

Identity

Digital Object Identifier (DOI)

• 10.1063/1.366380

Additional Document Info

start page

• 5072

end page

• 5076

volume

• 82

issue

• 10