In this article, we discuss the advantages of using Sb as a solvent for the growth of antimony-based solid solutions. We developed the LPE growth technology of InGaAsSb layers from Sb-rich liquid phases on GaSb substrates in both sides of the miscibility gap, near GaSb and near InAs. A strong substrate orientation influence was found on the effective segregation coefficients of components. The InGaAsSb/GaSb structures were studied by double-crystal X-ray diffraction. From a study of the variation of the rocking curves%27 half-width with supercooling temperature, it is possible to optimize the technological growth conditions. It is shown that high-quality InGaAsSb epitaxial layers can be produced by this technique.
In this article, we discuss the advantages of using Sb as a solvent for the growth of antimony-based solid solutions. We developed the LPE growth technology of InGaAsSb layers from Sb-rich liquid phases on GaSb substrates in both sides of the miscibility gap, near GaSb and near InAs. A strong substrate orientation influence was found on the effective segregation coefficients of components. The InGaAsSb/GaSb structures were studied by double-crystal X-ray diffraction. From a study of the variation of the rocking curves' half-width with supercooling temperature, it is possible to optimize the technological growth conditions. It is shown that high-quality InGaAsSb epitaxial layers can be produced by this technique.
