Electronic structure of some semiconductor fullerenes
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The electronic structure of small germanium, silicon, and carbon clusters is calculated. The calculation is carried out within a Hubbard-like Hamiltonian in which s- and p-electrons are taken into account. Charge transfer is allowed between the various atomic sites in order to achieve global charge neutrality. The local electronic density of states is calculated by means of the recursion method. The results for atomic aggregates with 20, 60 and 70 atoms are presented and compared with those obtained with other methods and with experimental data. © 1993.
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