abstract

• Single-photon sources are important building blocks for quantum information technology. Emitters based on solid-state systems provide a viable route to integration in photonic devices. Here, we report on single-photon emitters in the layered semiconductor GaSe. We identify the exciton and biexciton transition of the quantum emitters with power-dependent photoluminescence and photon statistics measurements. We find evidence that the localization of the excitons is related to deformations of the GaSe crystal, caused by nanoscale selenium inclusions, which are incorporated in the crystal. These deformations give rise to local strain fields, which induce confinement potentials for the excitons. This mechanism lights the way for the controlled positioning of single-photon emitters in GaSe on the nanoscale. © 2017 IOP Publishing Ltd.

authors

• Bakhtinov A.P.
• Borisenko D.N.
• Bratschitsch R.
• Del Pozo Zamudio Osvaldo
• Dmitriev A.I.
Kern J.
Kolesnikov N.N.
Michaelis de Vasconcellos S.
Niehues I.
Schwarz S.
Tartakovskii A.I.
Tonndorf P.
... more

publication date

• 2017-01-01

funding provided via

• Engineering and Physical Sciences Research Council, EPSRC: 696656, EP/M012727/1  Grant
• II.5-5  Grant
• Seventh Framework Programme, FP7  Grant

published in

• 2D Materials  Journal

keywords

• Biexciton; GaSe; Layered semiconductor; Single-photon emitter; Strain; Transition metal monochalcogenide Deformation; Excitons; Layered semiconductors; Nanotechnology; Particle beams; Photonic devices; Photons; Quantum optics; Selenium compounds; Strain; Transition metals; Biexcitons; Confinement potential; GaSe; Local strain field; Quantum information technologies; Single photon emitters; Single-photon source; Solid-state system; Gallium compounds

Digital Object Identifier (DOI)

• 10.1088/2053-1583/aa525b

start page

end page

volume

• 4

issue

• 2