abstract

• While much is known about isoelectronic materials related to carbon nanostructures, such as boron-nitride layers and nanotubes, rather less is known about equivalent silicon-based materials. Following the recent discovery of phosphorene, here we discuss isoelectronic silicon-monosulfide monolayers. We describe a set of anisotropic structures that clearly have a high stability with respect to previously reported silicon-monosulfide monolayers. The source of the layer anisotropy is related to the presence of Si-S double chains linked by some Si-Si covalent bonds together with a remarkable spd hybridization on Si. The increased stability is related to silicon forming four bonds, including an additional double-bond-like Si-Si bond. The involvement of d orbitals brings more variety to silicon-sulfide-based nanostructures that are isoelectronic to phosphorene, which could be relevant for future applications, adding extra degrees of freedom. © 2016 American Physical Society.

authors

• Aguilera Granja Juan Faustino
• Alonso-Lanza T.
• Ayuela A.

publication date

• 2016-01-01

published in

• Physical Review B  Journal

keywords

• Anisotropy; Chemical bonds; Degrees of freedom (mechanics); III-V semiconductors; Monolayers; Nanostructures; Sulfur compounds; Yarn; Anisotropic structure; Carbon Nanostructures; Double bonds; Double chain; Future applications; Nitride layers; Si-Si bonds; Silicon-based materials; Silicon compounds

Digital Object Identifier (DOI)

• 10.1103/PhysRevB.94.245441

start page

end page

volume

• 94

issue

• 24