Bulk lattice parameter and band gap of cubic InXGa1-XN (001) alloys on MgO (100) substrates Article uri icon

abstract

  • Abstract: InxGa1-xN (001) ternary alloys were grown on GaN/MgO (100) substrates in a plasma assisted molecular beam epitaxy system. We determined the in-plane [001] and in-growth [110] lattice parameters, as well as the bulk lattice parameter of the alloys for different In concentrations by high resolution X-ray diffraction. The In concentration was determined assuming Vegard;s law for the alloy lattice parameter. The optical energy gap of InxGa1-xN has been determined by transmittance measurements from absorption edges for several In concentrations. Our results show that the alloys have a direct band gap for all In concentrations and a bowing parameter b=1.84. © 2015 Elsevier B.V. All rights reserved.

publication date

  • 2015-01-01