Bulk lattice parameter and band gap of cubic InXGa1-XN (001) alloys on MgO (100) substrates
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Abstract: InxGa1-xN (001) ternary alloys were grown on GaN/MgO (100) substrates in a plasma assisted molecular beam epitaxy system. We determined the in-plane [001] and in-growth [110] lattice parameters, as well as the bulk lattice parameter of the alloys for different In concentrations by high resolution X-ray diffraction. The In concentration was determined assuming Vegard;s law for the alloy lattice parameter. The optical energy gap of InxGa1-xN has been determined by transmittance measurements from absorption edges for several In concentrations. Our results show that the alloys have a direct band gap for all In concentrations and a bowing parameter b=1.84. © 2015 Elsevier B.V. All rights reserved.
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A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III-V materials Alloys; Energy gap; Epitaxial growth; Lattice constants; Molecular beam epitaxy; Molecular beams; X ray diffraction; Absorption edges; Bowing parameters; Direct band gap; High resolution X ray diffraction; Optical energy gap; Plasma assisted molecular beam epitaxy; Semi conducting III-V materials; Transmittance measurements; Gallium alloys
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