Charge tuning in [111] grown GaAs droplet quantum dots Article uri icon

abstract

  • We demonstrate charge tuning in strain free GaAs/AlGaAs quantum dots (QDs) grown by droplet epitaxy on a GaAs(111)A substrate. Application of a bias voltage allows the controlled charging of the QDs from -3|e| to %2b2|e|. The resulting changes in QD emission energy and exciton fine-structure are recorded in micro-photoluminescence experiments at T=4K. We uncover the existence of excited valence and conduction states, in addition to the s-shell-like ground state. We record a second series of emission lines about 25meV above the charged exciton emission coming from excited charged excitons. For these excited interband transitions, a negative diamagnetic shift of large amplitude is uncovered in longitudinal magnetic fields. © 2014 AIP Publishing LLC.

publication date

  • 2014-01-01