Charge tuning in [111] grown GaAs droplet quantum dots
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We demonstrate charge tuning in strain free GaAs/AlGaAs quantum dots (QDs) grown by droplet epitaxy on a GaAs(111)A substrate. Application of a bias voltage allows the controlled charging of the QDs from -3|e| to %2b2|e|. The resulting changes in QD emission energy and exciton fine-structure are recorded in micro-photoluminescence experiments at T=4K. We uncover the existence of excited valence and conduction states, in addition to the s-shell-like ground state. We record a second series of emission lines about 25meV above the charged exciton emission coming from excited charged excitons. For these excited interband transitions, a negative diamagnetic shift of large amplitude is uncovered in longitudinal magnetic fields. © 2014 AIP Publishing LLC.
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Drops; Excited states; Excitons; Gallium arsenide; Ground state; III-V semiconductors; Nanocrystals; Semiconducting gallium; Semiconductor quantum wells; Charged excitons; Conduction state; Controlled charging; Diamagnetic shifts; Exciton fine structure; Inter-band transition; Longitudinal magnetic fields; Micro photoluminescence; Semiconductor quantum dots
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