abstract

• The role of a thin layer of conductive poly(3,4-ethylenedioxythiophene) doped with polystyrene sulfonate (PEDOT: PSS), inserted between the gate dielectric and the active layer in poly(3-hexylthiophene)-based transistors was investigated. The devices were fabricated in the bottom-gate top-contact geometry by using cross-linked poly(vinyl alcohol) as the dielectric, whereas the PEDOT: PSS layer was prepared by using an aged aqueous dispersion with addition of different amounts of dimethyl sulfoxide (DMSO) as a secondary dopant. Under these conditions, both a significant reduction in the number of electrically active traps at the interface with the semiconductor and an improvement in the field-effect mobility were obtained, whereas the low power consumption was preserved. The threshold voltage was also displaced by approximately -1 V. © 2014 IOP Publishing Ltd.

authors

• Cruz-Cruz I.
• Hümmelgen I.A.
• López-Sandoval R.
• Reyes Reyes Marisol
• Tavares A.C.B.

publication date

• 2014-01-01

published in

• Journal of Physics D: Applied Physics  Journal

keywords

• aged PEDOT: PSS dispersion; interface; organic field-effect transistor; P3HT-based transistors; poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate); secondary doping Dimethyl sulfoxide (DMSO); Electrically actives; Field-effect mobilities; Low-power consumption; Poly (3-hexylthiophene); Poly(3 ,4ethylenedioxythiophene): poly(styrenesulfonate); Poly-3 ,4-ethylenedioxythiophene; Polystyrene sulfonate; Dimethyl sulfoxide; Dispersions; Gate dielectrics; Interfaces (materials); Organic field effect transistors; Organic solvents; Polyvinyl alcohols; Semiconductor doping; Transistors; Conducting polymers

Digital Object Identifier (DOI)

• 10.1088/0022-3727/47/7/075102

start page

end page

volume

• 47

issue

• 7