abstract

• Silicon Rich Oxide (SRO) has been considered as a material to overcome the drawbacks of silicon to achieve optical functions. Various techniques can be used to produce it, including Low-Pressure Chemical Vapor Deposition (LPCVD). In this paper, a brief description of the studies carried out and discussions of the results obtained on electro-, cathode-, and photoluminescence properties of SRO prepared by LPCVD and annealed at 1,100 C are presented. The experimental results lead us to accept that SRO emission properties are due to oxidation state nanoagglomerates rather than to nanocrystals. The emission mechanism is similar to Donor-Acceptor decay in semiconductors, and a wide emission spectrum, from 450 to 850nm, has been observed. The results show that emission is a function of both silicon excess in the film and excitation energy. As a result different color emissions can be obtained by selecting the suitable excitation energy. Copyright © 2012 M. Aceves-Mijares et al.

authors

• Aceves-Mijares M.
• Berman-Mendoza D.
• Domnguez C.
• Falcony C.
• González-Fernández A.A.
• Luna-López A.
• López Estopier Rosa Elvia
• Morales A.
• Murphy-Arteaga R.

publication date

• 2012-01-01

keywords

• Color emission; Donor-acceptors; Emission mechanism; Emission properties; Emission spectrums; Nano-agglomerates; Optical function; Oxidation state; Photoluminescence properties; Silicon rich oxides; Chemical vapor deposition; Emission spectroscopy; Excitation energy; Vapors

Digital Object Identifier (DOI)

• 10.1155/2012/890701

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volume

• 2012