Controlled growth of excitonpolariton microcavities using in situ spectral reflectivity measurements
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We present an in situ measurement method for the precise control of the molecular beam epitaxial growth of microcavities. The method is based on continuous spectral reflectivity measurements and offers the required precision to monitor and control the growth of exactly tuned polariton microcavity structures. © 2010 Elsevier B.V. All rights reserved.
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Microcavities; Molecular beam epitaxy; Polaritons; Quantum wells; Semiconducting IIIV materials Controlled growth; Exciton-polariton; In-situ; In-situ measurement; Microcavity structures; Molecular beam epitaxial growth; Monitor and control; Polaritons; Precise control; Quantum wells; Required precision; Semi conducting III-V materials; Spectral reflectivity; Epitaxial growth; Molecular beam epitaxy; Molecular beams; Phonons; Photons; Quantum theory; Reflection; Microcavities
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