abstract

• We have measured the infrared reflectance anisotropy of bulk wurzite (0001) GaN. Reflectance difference (RD) spectra have been determined from the experimental reflectance for light polarization along the sample axes [0 1- 10] and [11 2- 0]. The spectra show an optical anisotropy around the frequency of the E1 (LO) and A1 (LO) GaN phonons. The spectra are influenced by the structural quality of the samples, as revealed by measurements of high resolution x-ray diffraction and Raman scattering. The RD may be originated by inhomogeneous anisotropic broadening of the optical phonons induced by crystal size distribution. Based on the sensitivity of the infrared spectra to the crystalline quality, we propose this infrared technique as a useful optical probe for hexagonal GaN characterization. © 2009 American Institute of Physics.

authors

• Navarro Contreras Hugo Ricardo
• Rodríguez Aranda Ma. del Carmen
• Rodríguez Vázquez Ángel Gabriel
• Vidal Borbolla Miguel Angel

publication date

• 2009-01-01

published in

• Journal of Applied Physics  Journal

keywords

• Anisotropic broadening; Crystal size distributions; Crystalline quality; Hexagonal GaN; High resolution X ray diffraction; Infrared reflectance; Infrared spectrum; Infrared technique; Optical phonons; Optical probe; Reflectance differences; Structural qualities; Wurzite; Anisotropy; Gallium alloys; Gallium nitride; Light; Phonons; Reflection; Semiconducting gallium; Infrared spectroscopy

Digital Object Identifier (DOI)

• 10.1063/1.3225564

start page

end page

volume

• 106

issue

• 6