abstract

• Current oscillations and other abnormalities in the dark current-voltage characteristics of an aluminum/silicon-rich oxide (SRO)/silicon structure were observed at room temperature. The SRO layers in the devices were fabricated by low pressure chemical vapor deposition and postdeposition thermal annealing. The spikelike current oscillations and other abnormalities are interpreted by an alternative switching between the on and off states of the conduction paths through the Si nanocrystallites at proper biases. © 2008 American Institute of Physics.

authors

• Aceves-Mijares M.
• Carrillo J.
• Kiebach R.
• López Estopier Rosa Elvia
• Monfil K.
• Yu Z.

publication date

• 2008-01-01

funding provided via

• National Natural Science Foundation of China  Grant
• National Science Foundation: 50172061  Grant

published in

• Journal of Applied Physics  Journal

keywords

• Annealing; Crystal growth; Current voltage characteristics; Low pressure chemical vapor deposition; Oxide films; Silicon; Conduction paths; Current oscillations; Nanocrystallites

Digital Object Identifier (DOI)

• 10.1063/1.2875397

start page

end page

volume

• 103

issue

• 6