Electrolytical diffusion of antimony in silicon Article

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Overview

abstract

• Experimental results for the electrodiffusion of antimony into 〈111〉 p-type silicon through thin SiO2 films are reported. C-V plots of metal-oxide-semiconductor capacitors show that n-p junctions are formed by the electrochemical process. The electrolytical doping profile is determined from C-V data in the depletion regime and it shows that the amount of antimony impurity ions in silicon can be controlled by means of the current-time product of the electrodiffusion process.

authors

• Martínez J.L.
• Ruiz J.C.
• Urías Hermosillo Jesús

publication date

• 1984-01-01

published in

• Applied Physics Letters  Journal

Research

keywords

• ANTIMONY AND ALLOYS - Diffusion; ELECTROLYTICAL DIFFUSION; SEMICONDUCTING SILICON

Identity

Digital Object Identifier (DOI)

• 10.1063/1.94648

Additional Document Info

start page

• 1073

end page

• 1075

volume

• 44

issue

• 11