abstract

• The influence of a short time annealing treatment on the structural and optical properties of antimony trisulfide is studied for chemically deposited thin films. The heat treatment at 350 °C is applied to Sb2S3 thin films under ambient pressure for 3 min. Different heterostructures are synthesized with n-type gadolinium-doped ceria (CeO2:Gd) and cadmium sulfide (CdS) on transparent conductive oxide (TCO) substrates: TCO/CdS/Sb2S3 (H1), TCO/CeO2:Gd/CdS/Sb2S3 (H2) and TCO/CeO2:Gd/Sb2S3 (H3). The spectroscopic behavior of thin films and heterostructures is studied before and after the annealing treatment. After the fast annealing, the band gap of Sb2S3 decreases from 2.16 to 1.54 eV and the crystallite size increases to 25 nm. Under AM1.5 illumination, the short circuit current density is 3.22, 3.51 and 1.68 mA/cm2 while the open circuit voltage is 225, 600 and 280 mV for H1, H2 and H3, respectively.

authors

• Chávez-Veloz S.G.
• Moreno García Harumi
• Rodríguez Aranda Ma. del Carmen
• Rodríguez Vázquez Ángel Gabriel

publication date

• 2025-01-01

funding provided via

• Laboratorio Nacional de Análisis Físicos; Consejo Nacional de Humanidades, Ciencias y Tecnologías, Conahcyt, (CF-2023-I-495, 3838413)  Grant

published in

• Optical Materials  Journal

keywords

• Antimony trisulfide; Ellipsometry; Gadolinium-doped ceria; Solar cell Antimony compounds; Cadmium sulfide; Cerium oxide; Cesium compounds; Crystallite size; Gadolinium compounds; Open circuit voltage; Ambient pressures; Annealing treatments; Antimony trisulfide; CeO 2; Gadolinia doped ceria; Gadolinium doped ceria; Structural and optical properties; Synthesised; Thin-films; Transparent conductive oxides; Annealing

Digital Object Identifier (DOI)

• 10.1016/j.optmat.2025.116791

PubMed ID

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end page

volume

• 161

issue