Hyperbolic-tangent composition-graded InxGa1-xAs/GaAs (100) structures grown by molecular beam epitaxy
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The molecular beam epitaxial growth and physical properties of In graded-composition layers of InGaAs on GaAs (100) substrates varying nominal In concentration from 12 to 97%25 and vice versa is analyzed along the growth front. The substrate temperature was varied as the In concentration was changed in order to propitiate the near-optimal growth conditions for the InGaAs alloy. Hyperbolic-tangent compositional gradients, from In-rich to Ga-rich alloys and vice versa, observed RHEED patterns characteristic of a flat surface during the growth. The HRXRD patterns showed clear diffraction peaks associated with the In concentration alloy at which the graded sample started, followed by a characteristic plateau of graded layers. The occurrence of dislocations in hyperbolic tangent gradients that relieve the strain up to a certain thickness is explored, reaching a nominal or an averaged lattice constant. © 2022 Elsevier Ltd
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Density dislocations; Hyperbolic tangent; Metamorphic layer; Molecular beam epitaxy Gallium arsenide; Hyperbolic functions; III-V semiconductors; Indium alloys; Molecular beams; Semiconducting gallium; Semiconducting indium; Semiconducting indium gallium arsenide; Semiconductor alloys; Semiconductor quantum wells; Substrates; X ray diffraction analysis; Composition-graded; Density dislocation; GaAs(1 0 0); Graded In; Graded-composition layer; Growth front; Hyperbolic tangent; Metamorphic layers; Molecular beam epitaxial growth; Molecular-beam epitaxy; Molecular beam epitaxy
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