Resistive organic memory devices based on nitrogen-doped CNTs/PSS composites Article uri icon

abstract

  • Non-volatile organic memory devices were fabricated using polystyrene sulfonate (PSS) %2b nitrogen-doped multi-walled carbon nanotubes (NCNTs) composites on glass and PET substrates. The organic memory devices showed different electrical properties depending on the NCNTs concentrations in the PSS matrix and the bottom electrode material. The Al/PSS %2b NCNTs/Al devices presented WORM-like behavior at low NCNTs concentrations (0.3 wt%25). If the NCNTs concentration is 1 wt%25, the devices showed rewritable memory behavior. This memory behavior is based on charge trapping/detrapping processes. While with a 3 wt%25 of NCNTs concentration, their rewritable behavior is related to the generation of oxygen vacancies (VO) in the thin layer of native Al oxide (AlOx) on the bottom electrode during the first voltage sweep. The ITO/PSS %2b NCNTs/Al devices with NCNTs concentrations ≤ 1 wt%25 showed a rewritable behavior, whose electrical bistability is based on the charge trapping/detrapping mechanism; while those fabricated with 3 wt%25 NCNTs concentration presented an ohmic behavior. The memory devices with Al as the bottom electrode can show physical deformations (bubbles) on the top electrode, when oxygen vacancies are generated due to electro-reduction of the AlOx layer, while devices with ITO as the bottom electrode did not show these bubbles. Thus, the charge trapping/detrapping processes and the VO creations can coexist in the Al/AlOx/PSS %2b NCNTs/Al memory devices, and one of them becomes preponderant, depending on the NCNTs concentration. © 2022, The Author(s), under exclusive licence to Springer Science%2bBusiness Media, LLC, part of Springer Nature.

publication date

  • 2022-01-01