selected publications

• article

  • Study of the oxygen incorporation in Al0.2Ga0.3In0.5P:Be layers grown by MBE employing a P-cracker cell.  Journal of Crystal Growth.  311:1650-1654. 2009-01-01
  • Temperature dependence of photoluminescence oxygen-related deep levels in Al0.2Ga0.3In0.5P:Be grown by solid source molecular beam epitaxy.  Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures.  26:1089-1092. 2008-01-01
  • High quality of 830 nm material grown by solid source molecular beam epitaxy for laser device printing applications.  Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures.  25:926-930. 2007-01-01
  • P-cracker cell temperature effects on the optical properties of AlGaInP:Be layers grown by SSMBE.  Journal of Crystal Growth.  301-302:84-87. 2007-01-01
  • Growth of quantum-well heterostructures by liquid phase epitaxy.  Critical Reviews in Solid State and Materials Sciences.  31:1-13. 2006-01-01
  Investigation of the composition-pulling or lattice-latching effect in LPE.  Journal of Crystal Growth.  277:138-142. 2005-01-01
  ... more

• conference paper

  • Preliminary evaluation of quantum hall effect devices by photoreflectance spectroscopy.  19th IMEKO World Congress 2009. 1906-1910. 2009-01-01
  • Recent measurements of the quantum hall effect in AlGaAs/GaAs heterostructures to obtain a resistance standard.  2006 3rd International Conference on Electrical and Electronics Engineering. -. 2006-01-01
  • Evaluation of AlGaAs/GaAs two dimensional electron gas heterostructures to obtain a resistance standard.  2nd International Conference on Electrical and Electronics Engineering, ICEEE and XI Conference on Electrical Engineering, CIE 2005. 424-427. 2005-01-01
  • Photoluminescence properties of Be-doped GaAs/(Al0.2Ga 0.8)0.51In0.49P heterostructures subjected to annealing processes.  Journal of Crystal Growth. 585-590. 2005-01-01