selected publications

• article

  • Modulation bandwidth of high-power single quantum well buried heterostructure InGaAsP/InP (λ=1.3 μm) and InGaAsP/GaAs (λ=0.8 μm) laser diodes.  Applied Physics Letters.  68:1186-1188. 1996-01-01
  • Modulation bandwidth of high-power single quantum well buried heterostructure InGaAsP/InP (λ=1.3 μm) and InGaAsP/GaAs (λ=0.8 μm) laser diodes.  Applied Physics Letters.  1186-. 1995-01-01