selected publications

• article

  • Obtención e investigación de heteroestucturas láser InGaAsP/GaAs e InGaAsP/InP con emisión de onda de 0.8 μm y 1.3 μm.  Revista Mexicana de Fisica.  44:282-289. 1998-01-01
  • Modulation bandwidth of high-power single quantum well buried heterostructure InGaAsP/InP (λ=1.3 μm) and InGaAsP/GaAs (λ=0.8 μm) laser diodes.  Applied Physics Letters.  68:1186-1188. 1996-01-01
  • H2O2:HF:C4O6H6 (Tartaric Acid):H2O Etching System for Chemical Polishing of GaSb.  Journal of the Electrochemical Society.  142:L189-L191. 1995-01-01
  • Modulation bandwidth of high-power single quantum well buried heterostructure InGaAsP/InP (λ=1.3 μm) and InGaAsP/GaAs (λ=0.8 μm) laser diodes.  Applied Physics Letters.  1186-. 1995-01-01