Conference Paper RDF
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- Rapid reflectance-anisotropy spectroscopy as an optical probe for real-time monitoring of thin film deposition
- Rare and forbidden kaon decays at NA62
- RDS investigation of adsorption and surface ordering processes on Cu(110)
- Re-calibration of camera space manipulation techniques accounting for fisheye lens radial distortion
- Real time simulation of a power system including renewable energy sources
- Real-time detector for multiple leaks in a pipeline
- Real-time emulator of an induction motor: FPGA-based implementation
- Real-time optical monitoring of semiconductor epitaxial growth
- Real-time reflectance anisotropy spectroscopy of MBE AlAs/GaAs interfaces
- Real-time vision tracking algorithm
- Real-time VLSI architecture for detection of moving object using wronskian determinant
- Recent measurements of the quantum hall effect in AlGaAs/GaAs heterostructures to obtain a resistance standard
- Recent NA48/2 and NA62 results
- Recent results from the NA62 experiment
- Recent results in kaon physics
- Recent SELEX results on the properties of charmed hadrons
- Recombination of oxygen atomic excited states produced by non-equilibrium RF plasma on different semiconductor materials: Catalytic phenomena and modelling
- Reconfigurable instrument for power quality monitoring in 3-phase power systems
- Reconstruction and analysis of human walking patterns using a computer 3D vision system
- Reconstruction induced surface strain in GaAs (001) surfaces characterized by reflectance modulated spectroscopies
- Redesign of the CKM RICH velocity spectrometers for use in a 1/4GHz unseparated beam
- Reduced output current ripple DC-DC buck converter control
- Reducibility, heats of re-oxidation, and structure of vanadia supported on TiO2 and TiO2-Al2O3 supports used as vanadium traps in FCC
- Reflectance Calibration with Normalization Correction in Hyperspectral Imaging
- Reflectance difference spectrometer based on the use of a CCD camera
- Reflectance difference spectroscopy as an optical probe for the in situ determination of doping levels in gaas
- Reflectance-anisotropy study of the dynamics of molecular beam epitaxy growth of GaAs and InGaAs on GaAs (001)
- Reflectance-difference spectroscopy as an optical probe for in situ determination of doping levels in GaAs
- Reflectance-difference Spectroscopy as an optical probe for the in situ determination of doping levels in GaAs
- Reflectance-difference spectroscopy: a technique for characterization of dislocations in semiconductors