Revisiting CdS-PbS solar cell structure
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Starting in 1969 and into 1970's CdS-PbS cells were reported with open circuit voltage (Voc) up to 450 mV and short circuit current density (Jsc) < 1 mA/cm2. However, further reports are scarce. In this work we revisit this type of photovoltaic junction. Photovoltaic behavior of cell structures prepared by chemical deposition is presented for: glass/CdS/PbS/Ag, SnO2:F/CdS/PbS/Ag, and SnO2:F/CdS/ (Bi2S3 or/and CdSe/PbS)/Ag. SnO2:F/CdS/PbS/Ag shows Voc of ≈500 mV and Jsc of ≈2 mA/cm2 under an illumination of 3 kW/m2, while SnO2:F/CdS/ (Bi2S3 or/and CdSe)/PbS/Ag show Voc of ≈200 to 300 mV and Jsc of ≈2-6 mA/cm2 under tungsten-halogen illumination of 1 kW/m2. This work opens up possibilities for developing simple solar cell structures by sequential chemical deposition of semiconductors. © 2007 Materials Research Society.
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Current density; Deposition; Lighting; Open circuit voltage; Photovoltaic cells; Semiconductor materials; Short circuit currents; Berkelium; Bismuth; Cadmium sulfide; Deposition; Open circuit voltage; Solar cells; Chemical deposition; Photovoltaic behavior; Tungsten-halogen illumination; Cdse; Cell structure; Photovoltaic; Solar cell structures; Cadmium sulfide solar cells; Photovoltaic effects
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