Toward large-scale access-transistor-free memristive crossbars Conference Paper

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Overview

abstract

• Memristive crossbars have been shown to be excellent candidates for building an ultra-dense memory system because a per-cell access-transistor may no longer be necessary. However, the elimination of the access-transistor introduces several parasitic effects due to the existence of partially-selected devices during memory accesses, which could limit the scalability of access-transistor-free (ATF) memristive crossbars. In this paper we discuss these challenges in detail and describe some solutions addressing these challenges at multiple levels of design abstraction. © 2015 IEEE.

authors

• Cheng K.-T.
• Ghofrani A.
• Lastras Montaño Miguel Angel

publication date

• 2015-01-01

funding provided via

• Air Force Office of Scientific Research, AFOSR  Grant

published in

• 20th Asia and South Pacific Design Automation Conference, ASP-DAC 2015  Proceedings

Research

keywords

• Computer aided design; Design abstractions; Memory access; Memory systems; Multiple levels; Parasitic effect; Transistors

Identity

Digital Object Identifier (DOI)

• 10.1109/ASPDAC.2015.7059067

Additional Document Info

start page

• 563

end page

• 568