Cathodoluminescence of Silicon Rich Oxide with nitrogen incorporated

Cathodoluminescence (CL) spectra for Silicon Rich Oxide (SRO) films with different silicon excess and nitrogen content are measured at room temperature. The SRO was deposited by Low Pressure Chemical Vapor Deposition (LPCVD) on Si substrates, and nitrogen was introduced into SRO adding NH3 to the reactive gases. The samples were divided in two parts, one part was annealed at 1100°C. The nitrogen incorporation was observed by Fourier Transform Infrared Spectroscopy (FTIR). All samples annealed at 1100°C show CL, and only SRO with low silicon excess shows emission as deposited. The CL emission shows bands centered at ∼460nm, ∼530nm and ∼720nm. The emission of these bands depends on nitrogen and silicon excess. The peak of the blue CL band (∼460nm) is related to twofold coordinated silicon center (=Si:). The band at ∼530nm is related with defect due to nitrogen incorporation. The band at ∼720nm band is similar to that obtained in PL. © 2007 IEEE.

Cathodoluminescence (CL); Fourier Transform Infrared Spectroscopy (FTIR); Photoluminescence (PL); Silicon Rich Oxide (SRO) Ammonia; Cathodoluminescence; Fourier transform infrared spectroscopy; Nitrogen; Oxide films; Cathodoluminescence spectra; Nitrogen content; Nitrogen incorporation; One parts; Reactive gas; Si substrates; Silicon centers; Silicon rich oxides; Silicon compounds

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