Low temperature growth of epitaxial CdSe thin films by an isothermal closed space sublimation technique using two elemental sources Article uri icon

abstract

  • We present a novel low-cost technique for the epitaxial growth of thin films. Using a closed space isothermal vapor phase technique, we have grown CdSe thin films on GaAs (1 0 0) substrates. The epitaxial growth is performed by exposing the substrate to Cd and Se vapor from elemental sources in a cycled manner. The thermodynamic and kinetic aspects of the process are discussed. X-ray diffraction patterns confirm the epitaxial growth of CdSe films on the GaAs substrates. AFM images were obtained to study the film morphologies.

publication date

  • 1999-01-01