Use of hafnium(IV) oxide in biosensors
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Hafnium(IV) oxide is a material with properties that can increase the sensitivity, durability, and reliability of biosensors made from silicon dioxide and other semiconductor materials due to its high dielectric constant, thermodynamic stability, and the simplicity with which it can be deposited. This work describes the use of this material in biosensors based on field-effect transistors to detect ions and DNA, in immunosensors to detect an antigen-antibody complex, its use as a contrast material in computed tomography scans and the possibility of using it in optic biosensors in the infrared region. Its low cost and versatility in the field of biosensors is underscored. © 2018, © 2018 Taylor %26 Francis.
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Biosensor; DNA sensor; field-effect transistor; hafnium(IV) oxide; immunosensor contrast medium; DNA; hafnium; ion; oxide; silicon dioxide; DNA; hafnium; ion; oxide; antigen antibody complex; computer assisted tomography; infrared radiation; priority journal; Review; analysis; chemistry; computed tomography scanner; genetic procedures; human; immunology; Antigen-Antibody Complex; Biosensing Techniques; DNA; Hafnium; Humans; Ions; Oxides; Tomography Scanners, X-Ray Computed
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