abstract

• We report the photovoltaic performance of a diode based on a p-type tungsten diselenide (WSe2) active region. The device is formed by WSe2 and cadmium sulfide (CdS) layers, both obtained via chemical bath deposition. A novel hydrazine-free chemical formulation allows deposition of WSe2 on glass and flexible Hastelloy substrates. Characterization of WSe2 via Raman spectroscopy shows four bands at 189, 244, 293, and 588 cm-1. The strongest band at 293 cm-1 is assigned to the interlayer interaction mode of the WSe2 layers. The photoluminescent characterization of Hastelloy/CdS/WSe2 samples exhibits two excitonic transitions at 1.7860 and 1.7899 eV. The current density-voltage (J-V) measurements of the CdS/WSe2 structure show a photovoltaic response with VOC = 180 mV, JSC = 0.07 mA cm-2, and FF = 0.22. © 2019 IOP Publishing Ltd.

authors

• Guerrero G.A.
• Moreno García Harumi
• Rodríguez Vázquez Ángel Gabriel

publication date

• 2019-01-01

published in

• Materials Research Express  Journal

keywords

• bilayer; chemical bath deposition; diode; hydrazine-free; WSe2 Cadmium sulfide; Deposition; Diodes; Hydrazine; II-VI semiconductors; Sulfur compounds; Tungsten compounds; Bi-layer; Chemical formulation; Chemical-bath deposition; Interlayer interactions; Photovoltaic applications; Photovoltaic performance; Photovoltaic response; WSe2; Selenium compounds

Digital Object Identifier (DOI)

• 10.1088/2053-1591/ab0efe

start page

end page

volume

• 6

issue

• 10