High sensitivity bolometers from thymine functionalized multi-walled carbon nanotubes Article uri icon

abstract

  • In this work, thin films of thymine functionalized MWNT (t-MWNT) were prepared and systematically characterized in their thermal and electrical response in order to determine the proper conditions for them to have optimum bolometric properties. It was found that t-MWNT, deposited in dried layers 5 × 6 mm and 0.53 ± 0.05 μm in thickness, on top of silicon wafers, provided the best characteristics to function as bolometric materials. One of the key resultant figures of merit, the Temperature Coefficient of Resistance (TCR or α), which is measured in percent change of resistance per degree Kelvin was found to be −5.6 ± 0.1%25/K. Typical measured response times of these thermal devices ranged from 0.8 to 1.6 ms. This indicates that these bolometer materials can be modulated at frequencies above 1 kHz. The responsivity (Rv) and specific detectivity (D*) at the optimal bias voltage of 1 V and at 100 Hz were Rv = 252 ± 4 V/W, and D* = (2 ± 0.2) × 106 cmHz1/2/W. Both results are among the largest for MWNT based bolometer devices; however the specific detectivity observed is smaller than that for bolometric devices prepared with SWNT. The t-MWNT%27s have their optimal specific detectivity response for 0.75 and 1.0 V bias voltages examined, in the frequency range above 1 kHz. © 2016 Elsevier B.V.
  • In this work, thin films of thymine functionalized MWNT (t-MWNT) were prepared and systematically characterized in their thermal and electrical response in order to determine the proper conditions for them to have optimum bolometric properties. It was found that t-MWNT, deposited in dried layers 5 × 6 mm and 0.53 ± 0.05 μm in thickness, on top of silicon wafers, provided the best characteristics to function as bolometric materials. One of the key resultant figures of merit, the Temperature Coefficient of Resistance (TCR or α), which is measured in percent change of resistance per degree Kelvin was found to be −5.6 ± 0.1%25/K. Typical measured response times of these thermal devices ranged from 0.8 to 1.6 ms. This indicates that these bolometer materials can be modulated at frequencies above 1 kHz. The responsivity (Rv) and specific detectivity (D*) at the optimal bias voltage of 1 V and at 100 Hz were Rv = 252 ± 4 V/W, and D* = (2 ± 0.2) × 106 cmHz1/2/W. Both results are among the largest for MWNT based bolometer devices; however the specific detectivity observed is smaller than that for bolometric devices prepared with SWNT. The t-MWNT's have their optimal specific detectivity response for 0.75 and 1.0 V bias voltages examined, in the frequency range above 1 kHz. © 2016 Elsevier B.V.

publication date

  • 2017-01-01