Dislocation-induced effects in the reflectance-difference spectrum of semi-insulating GaAs (100)

We report on reflectance-difference (RD) spectroscopy of semi-insulating GaAs (100) and show that the RD with spectra have a component associated with an anisotropic surface strain due to 60° dislocations. For the samples reported in this paper the anisotropic strain results in a normalized effective change in lattice constant in the range from 10-5 to 10-4. Besides contributing to the understanding of RD lineshapes, the results reported in this paper show that RD spectroscopy can be used as a very sensitive probe to characterize dislocations in zincblende semiconductors.

A. semiconductors; A. surfaces and interfaces; D. optical properties Anisotropy; Characterization; Dislocations (crystals); Interfaces (materials); Lattice constants; Optical properties; Strain; Surfaces; Anisotropic surface strain; Dislocation induced effects; Optical anisotropy; Reflectance difference spectrum; Semi-insulating gallium arsenide; Zincblende semiconductor; Semiconducting gallium arsenide

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