abstract

• We report on growth and characterization of individual InAsxP1-x/GaInP quantum dots with variable nominal As molar fraction. Magnetophotoluminescence experiments reveal quantum dot emission in a wide range from 1.3 to 1.8 eV, confirming successful incorporation of As into the quantum dots. Transmission electron microscopy reveals a core-cap structure of InAsP quantum dots with an InAs-rich core capped by an InP-rich layer. Inside the core, an average As molar fraction up to x≈0.15 is observed. The heavy-hole g factors are found to be strongly dependent on As molar fraction, while the electron g factors are close to the InP values. This suggests type-II carrier confinement in the studied InAsP dots with holes (electrons) localized in the core (cap) region. Finally, dynamic nuclear polarization is observed, which allows for further insight into structural properties using nuclear magnetic resonance. © 2017 American Physical Society.

authors

• Beanland R.
• Chekhovich E.A.
• Del Pozo Zamudio Osvaldo
• Krysa A.
• Puebla J.
• Sanchez A.M.
• Skolnick M.S.
• Tartakovskii A.I.
• Toro R.

publication date

• 2017-01-01

funding provided via

• Engineering and Physical Sciences Research Council, EPSRC: EP/J007544/1  Grant
• Royal Society  Grant
• University of Sheffield  Grant

published in

• Physical Review Materials  Journal

keywords

• Electrons; Gallium compounds; High resolution transmission electron microscopy; III-V semiconductors; Indium arsenide; Indium phosphide; Metallorganic vapor phase epitaxy; Nanocrystals; Semiconducting indium phosphide; Cap structure; Carrier confinements; Dynamic nuclear polarization; Electron g-factor; Magneto-optical spectroscopy; Magnetophotoluminescence; Molar fractions; Quantum dot emission; Semiconductor quantum dots

Digital Object Identifier (DOI)

• 10.1103/PhysRevMaterials.1.034605

start page

end page

volume

• 1

issue

• 3