Structural and Raman studies of Ga2O3 obtained on GaAs substrate Article

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Overview

abstract

• Ga2O3 were synthesized by controlled thermal oxidation of GaAs substrates at atmospheric pressure. The crystalline structure and vibrational modes were studied as a function of growth temperature within a range of 750-950 °C. Samples grown in the range of 750-850 °C present nanostructured surface and the samples obtained at higher temperature are oriented to the (004) β-phase. Crystalline structure was confirmed by X-ray diffraction, and Raman scattering studies. The evolution of the surface morphology was analyzed by atomic force microscopy, and scanning electron microscopy. © 2015 Elsevier Ltd.

authors

• Arias-Cerón J.S.
• Galván M.
• Galván Peña César Gabriel
• López Luna Edgar
• Sánchez-R V.M.
• Vilchis H.

publication date

• 2016-01-01

funding provided via

• 152155, 178131  Grant

published in

• Materials Science in Semiconductor Processing  Journal

Research

keywords

• Gallium oxide; Nanostructures; Raman scattering; Thermal oxidation Atmospheric pressure; Atomic force microscopy; Crystalline materials; Gallium; Gallium arsenide; Nanostructures; Raman scattering; Scanning electron microscopy; Semiconducting gallium; Substrates; X ray diffraction; Beta-phase; Crystalline structure; GaAs substrates; Gallium oxides; Nanostructured surface; Raman studies; Thermal oxidation; Vibrational modes; Gallium alloys

Identity

Digital Object Identifier (DOI)

• 10.1016/j.mssp.2015.10.027

Additional Document Info

start page

• 513

end page

• 518

volume

• 41