CIGS thin film growing by electrodeposition technique using mechanical perturbation at the working electrode Article uri icon

abstract

  • The Cu(In,Ga)Se2 (CIGS) morphology has an important role in order to build efficient solar cells. In this paper, the morphology of CIGS films obtained by two one-step electrodeposition strategies on Mo films is compared. One of them was the potentiostatic mode where a DC potential is applied to the working electrode with respect to the reference electrode by adjusting the current at an auxiliary electrode. The other strategy was the use of traditional methodology, but also periodical mechanical perturbations were applied to the working electrode during the electrodeposition process. The films obtained from both strategies were analyzed as electrodeposited and after annealing in a selenium atmosphere. The current density and voltage signals produced during the electrodeposition process also were analyzed. The annealed film morphology obtained with the potentiostatic mode plus periodical mechanical perturbation was more dense and compact than without mechanical perturbation. Furthermore, using contour lines, the morphology evolution and mass transport distribution on the working electrode during electrodeposition process with the potentiostatic mode are explained. © 2016, Springer Science%2bBusiness Media New York.

publication date

  • 2016-01-01