abstract

• Gallium chalcogenides are promising building blocks for novel van der Waals heterostructures. We reportonthe low-temperature micro-photoluminescence (PL) of GaTe and GaSefilms with thicknesses ranging from 200 nm toasingle unit cell.Inboth materials,PL shows adramatic decrease by 104-105 when film thicknessis reduced from 200to10 nm. Basedon evidence from continuouswave (cw) and time-resolved PL, wepropose amodel explaining the PLdecrease as a result of nonradiative carrier escape via surface states. Our results emphasize the need for special passivation of two-dimensional films for optoelectronic applications. © 2015 IOP Publishing Ltd.

authors

• Akimov I.A.
• Bayer M.
• Borisenko D.N.
• Chekhovich E.A.
• Del Pozo Zamudio Osvaldo
• Dmitriev A.I.
• Kay N.D.
• Kolesnikov N.N.
• Kolosov O.
• Lashkarev G.V.
• Robinson B.J.
• Schofield R.C.
• Schwarz S.
• Sich M.
• Tartakovskii A.I.

publication date

• 2015-01-01

funding provided via

• Consejo Nacional de Ciencia y Tecnología, CONACYT  Grant
• Engineering and Physical Sciences Research Council, EPSRC: EP/G06556X/1, EP/J007544/1, EP/K023373/1, EP/M012727/1  Grant
• Seventh Framework Programme, FP7  Grant

published in

• 2D Materials  Journal

keywords

• 2 dsemiconductors; III-VI materials; Optical properties; Photoluminescence Heterojunctions; Inorganic compounds; Layered semiconductors; Optical properties; Photoluminescence; Selenium compounds; Tellurium compounds; Temperature; Van der Waals forces; 2 dsemiconductors; Building blockes; Carrier escapes; Continuous waves; Low temperatures; Micro photoluminescence; Non-radiative; Optoelectronic applications; Gallium compounds

Digital Object Identifier (DOI)

• 10.1088/2053-1583/2/3/035010

start page

end page

volume

• 2

issue

• 3