Optical properties of super stoichiometric TiN1%2bx thin films Article

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Overview

abstract

• Nitrogen-rich titanium nitride (TiN1 %2b x) thin films containing between 70.4 at.%25 and 87.0 at.%25 nitrogen were synthesized and deposited onto single crystal silicon with a (100) crystallographic orientation via the reactive magnetron direct current (DC)-sputtering by systematically varying the process pressure and substrate temperature. The ultraviolet and visible optical properties of these chemically unique TiN1 %2b x thin films have been explored vs. surface roughness and stoichiometry. The specular and diffuse reflectances are linearly coupled to the root mean square surface roughness. The reflectance and absorption were shown to be wavelength dependent. Absorption coefficients for these non-transparent thin films were experimentally determined by monitoring the real-time transient temperature profile of the films and directly correlating the maximum temperature increment to the linear absorption coefficient. The linear absorption coefficient was found to range between 9.11 × 105 and 3.84 × 106 cm- 1 and is strongly coupled to the incident wavelength and nitrogen content. The interaction depths range between 2 and 11 nm, indicating interaction only near the film surface. © 2012 Elsevier B.V. All rights reserved.

authors

• Aguilar G.
• Duvall W.
• Penilla E.
• Pérez Gutiérrez Francisco Gerardo
• Wang J.

publication date

• 2012-01-01

funding provided via

• University of California Institute for Mexico and the United States, UC MEXUS  Grant
• University of California, UC: C12-FAI-03-57.57, ARO/W911NF-07-1-0213, PROMEP/103.5/11/3671  Grant

published in

• Thin Solid Films  Journal

Research

keywords

• Absorption coefficient; Diffuse reflectance; Reactive magnetron DC-sputtering; Specular reflectance; Surface roughness; Thin films; Titanium nitride Absorption coefficients; Crystallographic orientations; Diffuse reflectance; Direct current; Film surfaces; Incident wavelength; Interaction depth; Linear absorption coefficient; Maximum temperature; Nitrogen content; Process pressure; Reactive magnetron DC-sputtering; Root Mean Square; Single crystal silicon; Specular reflectance; Substrate temperature; Transient temperature; Nitrogen; Optical properties; Reflection; Silicon wafers; Single crystals; Stoichiometry; Surface roughness; Thin films; Titanium nitride

Identity

Digital Object Identifier (DOI)

• 10.1016/j.tsf.2012.10.016

Additional Document Info

start page

• 272

end page

• 277

volume

• 524