Organic low voltage rewritable memory device based on PEDOT:PSS/f-MWCNTs thin film
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We report on devices constructed using a small quantity (≤0.01 wt.%25) of functionalized multiwalled carbon nanotubes (f-MWCNTs) embedded in a conducting polymer (poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate), PEDOT:PSS) matrix and aluminum top electrodes, prepared on indium-tin-oxide (ITO) substrates. Our ITO/(PEDOT:PSS f-MWCNTs)/Al devices show current bistability. The low resistance ON-state, as well as the high resistance OFF state, retain the information for hours and are stable after hundreds of write-read-erase-read (WRER) cycles, being potentially interesting for erasable and rewritable volatile memory device applications. Moreover, the operation voltages used for performing these WRER cycles are very low. The threshold voltage for OFF to ON switching can be adjusted changing the f-MWCNTs concentration. Our results suggest that the nanotubes are necessary for the production of an inhomogeneous electric field playing a role in the electroforming (dielectric breakdown) of the aluminum oxide layer at the Al2O3/(PEDOT:PSS) interface. © 2012 Elsevier B.V. All rights reserved.
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We report on devices constructed using a small quantity (≤0.01 wt.%25) of functionalized multiwalled carbon nanotubes (f-MWCNTs) embedded in a conducting polymer (poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate), PEDOT:PSS) matrix and aluminum top electrodes, prepared on indium-tin-oxide (ITO) substrates. Our ITO/(PEDOT:PSS %2b f-MWCNTs)/Al devices show current bistability. The low resistance ON-state, as well as the high resistance OFF state, retain the information for hours and are stable after hundreds of write-read-erase-read (WRER) cycles, being potentially interesting for erasable and rewritable volatile memory device applications. Moreover, the operation voltages used for performing these WRER cycles are very low. The threshold voltage for OFF to ON switching can be adjusted changing the f-MWCNTs concentration. Our results suggest that the nanotubes are necessary for the production of an inhomogeneous electric field playing a role in the electroforming (dielectric breakdown) of the aluminum oxide layer at the Al2O3/(PEDOT:PSS) interface. © 2012 Elsevier B.V. All rights reserved.
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Carbon nanotubes; Low voltages memories; Organic memories; Volatile memories Alumina; Aluminum oxide; Carbon nanotubes; Conducting polymers; Digital storage; Electric fields; Indium compounds; Threshold voltage; Tin oxides; Yarn; Device application; Functionalized multi-walled carbon nanotubes; Indium tin oxide substrates; Inhomogeneous electric fields; Low voltages memory; Organic memory; Poly(3 ,4-ethylenedioxythiophene):poly(styrenesulfonate); Volatile memory; Multiwalled carbon nanotubes (MWCN)
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